RBV408 [BL Galaxy Electrical]
SILICON BRIDGE RECTIFIERS; 硅桥式整流器
| 型号： | RBV408 |
| 厂家： | 
BL Galaxy Electrical |
| 描述： | SILICON BRIDGE RECTIFIERS |
| 文件： | 总2页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GALAXY ELECTRICAL
RBV4005---RBV410
BL
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 4.0 A
SILICON BRIDGE RECTIFIERS
FEATURES
KBJ4
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique
Surge overload rating: 80 amperes peak
inch (mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RBV RBV
RBV RBV RBV RBV
RBV
410
UNITS
4005
401
402
404
406
408
V
V
V
Maximum recurrent peak reverse voltage
Maximum RMS voltage
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forw ard
100
1000
A
4.0
IF(AV)
Output current
@TC=50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
A
IFSM
80
Maximum instantaneous forw ard voltage
at 2.0 A
V
1.0
VF
IR
Maximum reverse current
@TA=25
10
μA
at rated DC blocking voltage @TA=100
Operating junction temperature range
Storage temperature range
100
- 55 ---- + 150
TJ
TSTG
- 55 ---- + 150
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BLGALAXY ELECTRICAL
Document Number 0287142
1.
RATINGS AND CHARACTERISTIC CURVES
RBV4005---RBV410
FIG.1 -- PEAK FORWARD SURGE CURRENT
FIG.2 -- FORWARD DERATING CURVE
4.0
3.0
100
80
8.3ms Single Half Sine Wave
TJ=150
60
2.0
1.0
40
20
0
0
0
25
50
75
100
125
150
1
10
100
NUMBER OF CYCLES AT60H
CASE TEMPERATURE,
Z
FIG.3 -- TYPICAL FORWARD CHARACTERISTIC
100
10
2
1.0
0.1
.01
.1
.3
.5 .7 0.9 1.1 1.3 1.5
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
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2.
BLGALAXY ELECTRICAL
Document Number 0287142
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